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SI5908DC Dual N-Channel 20V MOSFET

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Description

Dual N-Channel 20 V (D-S) MOSFET Si5908DC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.040 at VGS = 4.5 V 20 0.045 at VGS = 2.5 V 0..

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Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFETs
* Ultra Low RDS(on) and Excellent Power Handling in Compact Footprint

Applications

* Load Switch
* PA Switch
* Battery Switch D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ±8 Cont

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