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SI5948DU MOSFET

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Description

www.vishay.com Si5948DU Vishay Siliconix Dual N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () MAX.0.082 at VGS = 10 V 0.094 a.

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Features

* TrenchFET® power MOSFET
* 100 % Rg and UIS tested
* New thermally enhanced PowerPAK® ChipFET® package - Small footprint area - Low on-resistance - Thin 0.8 mm profile
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 AP

Applications

* DC/DC power supply D1 D2 G1 N-Channel MOSFET S1 G2 N-Channel MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA =

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