Si5980DU Dual N-Channel 100-V (D-S) MOSFET

Vishay

Description

Si5980DU Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.567 at VGS = 10 V ID (A) 2.5 Qg (Typ.) 2.2.

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Datasheet Specifications

Part number: Si5980DU
Manufacturer: Vishay ↗
File Size: 112.44 KB
Datasheet: Si5980DU-Vishay.pdf
Description: Dual N-Channel 100-V (D-S) MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile

Applications

* D1 D2
* Load Supply
* Power Supply G1 G2 Bottom View Ordering Information: Si5980DU-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate

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Si5980DU Dual N-Channel 100-V D-S MOSFET Vishay

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