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SI5936DU Dual N-Channel MOSFET

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Description

New Product Dual N-Channel 30-V (D-S) MOSFET Si5936DU Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max.0.030 at VGS = 10 V 30 0.040 at V.

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Datasheet Specifications

Part number
SI5936DU
Manufacturer
Vishay ↗
File Size
152.26 KB
Datasheet
SI5936DU-Vishay.pdf
Description
Dual N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile
* 100 % Rg Tested

Applications

* Network
* System Power DC/DC D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs)

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