SIC779 Integrated DrMOS Power Stage

Vishay Siliconix

Description

SiC779 Vishay Siliconix Integrated DrMOS Power Stage .
The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC.

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Datasheet Specifications

Part number: SIC779
Manufacturer: Vishay ↗ Siliconix
File Size: 446.51 KB
Datasheet: SIC779_VishaySiliconix.pdf
Description: Integrated DrMOS Power Stage

Features

* Industry benchmark Gen III MOSFETs with integrated Schottky diode
* DrMOS compliant gate driver IC
* Enables Vcore switching at 1 MHz
* Easily achieve > 93 % efficiency in multi-phase, low output voltage solutions
* Low ringing on the VSWH pin reduces EMI

Applications

* The SiC779 incorporates an advanced MOSFET gate driver IC. This IC accepts a single PWM input from the VR controller and converts it into the high side and low side MOSFET gate drive signals. The driver IC is designed to implement the skip mode (SMOD) function for light load efficiency improvement.

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SIC779 Integrated DrMOS Power Stage Vishay Siliconix

Vishay Siliconix SIC779-like datasheet