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SiHFB9N30A Power MOSFET

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Description

IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4.
G S G D S N-Channel MOSFET Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized.

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Features

* 300 0.45
* Dynamic dv/dt Rating Available
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Lead (Pb)-free Available RoHS

Applications

* at lower dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRFB9N30APbF SiHFB9N30A-E3 IRFB9N30A SiHFB9N30A ABSOLUTE MAXIMUM R

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