SiHFBC40L Power MOSFET

Vishay Siliconix

Description

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 600 VGS = 10 V 60 Qgs (n.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SiHFBC40L
Manufacturer: Vishay ↗ Siliconix
File Size: 288.72 KB
Datasheet: SiHFBC40L_VishaySiliconix.pdf
Description: Power MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* Surface Mount (IRFBC40S, SiHFBC40S)
* Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)
* Available in Tape and Reel (IRFBC40S, SiHFBC40S)
* Dynamic dV/dt Rating
* 150 °C Operating Temperature

Applications

* because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC40L, SiHFBC40L) is available for low-profile applications. D2PAK (TO-263) SiHFBC40STRL-GE3a IRFBC40STRLPbFa SiHFBC40STL-E3a I2PAK (TO-262) SiHFBC40

SiHFBC40L Distributors

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SiHFBC40L Power MOSFET Vishay Siliconix

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