SiHFBC40LC Power MOSFET

Vishay Siliconix

Description

IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 39 .
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs.

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Datasheet Specifications

Part number: SiHFBC40LC
Manufacturer: Vishay ↗ Siliconix
File Size: 172.32 KB
Datasheet: SiHFBC40LC_VishaySiliconix.pdf
Description: Power MOSFET

Features

* 600 V 1.2
* Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V, VGS Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated Lead (Pb)-free Available Available RoHS
* COMPL

Applications

* Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs. These device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFETs offer the designer a new standard in power transistors for switching applications. G

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SiHFBC40LC Power MOSFET Vishay Siliconix

Vishay Siliconix SiHFBC40LC-like datasheet