Description
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 600 VGS = 10 V 60 Qgs (n.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.
Features
* Halogen-free According to IEC 61249-2-21
Definition
* Surface Mount (IRFBC40S, SiHFBC40S)
* Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)
* Available in Tape and Reel (IRFBC40S, SiHFBC40S)
* Dynamic dV/dt Rating
* 150 °C Operating Temperature
Applications
* because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC40L, SiHFBC40L) is available for low-profile applications. D2PAK (TO-263) SiHFBC40STRL-GE3a IRFBC40STRLPbFa SiHFBC40STL-E3a
I2PAK (TO-262) SiHFBC40