SiHFBG20 Power MOSFET

Vishay Siliconix

Description

www.vishay.com IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.(nC) Qgs (nC) Qgd (nC) Configuration 1.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SiHFBG20
Manufacturer: Vishay ↗ Siliconix
File Size: 510.20 KB
Datasheet: SiHFBG20_VishaySiliconix.pdf
Description: Power MOSFET

Features

* Dynamic dV/dt rating
* Repetitive avalanche rated
* Fast switching
* Ease of paralleling Available RoHS
* COMPLIANT
* Simple drive requirements
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFBG20PbF SiHFBG20-E3 IRFBG20 SiHFBG20 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER S

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SiHFBG20 Power MOSFET Vishay Siliconix

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