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SiHFD9120 Power MOSFET

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Description

IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Dynamic dV/dt Rating 0.60
* Repetitive Avalanche Rated
* For Automatic Insertion
* End Stackable
* P-Channel
* 175 °C Operating Temperature
* Fast Switching
* Lead (Pb)-free Available Available RoHS
* COMPLIANT www. DataSheet4U.

Applications

* unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay pers

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