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SiHFD214 Power MOSFET

SiHFD214 Description

IRFD214, SiHFD214 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 8.2 1.8.
G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized.

SiHFD214 Features

* 250 2.0
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* For Automatic Insertion
* End Stackable
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Available RoHS
* COMP

SiHFD214 Applications

* are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular produ

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Power MOSFET Vishay
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