SiHFIZ24G Power MOSFET

Vishay Siliconix

Description

Power MOSFET IRFIZ24G, SiHFIZ24G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SiHFIZ24G
Manufacturer: Vishay ↗ Siliconix
File Size: 1.55 MB
Datasheet: SiHFIZ24G_VishaySiliconix.pdf
Description: Power MOSFET

Features

* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS
* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT
* 175 °C Operating Temperature
* Dynamic dV/dt Rating
* Low Thermal Resistance
* Le

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

SiHFIZ24G Distributors

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SiHFIZ24G Power MOSFET Vishay Siliconix

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