V50100P Datasheet (Vishay Siliconix) - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V50100P, Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V50100P Features

* Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Mechanical Data Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte