D Low On-Resistance: 3.5 W D Secondary Breakdown Free: 260 V D Low Power/Voltage Driven D Low Input and Output Leakage D Excellent Thermal Stability
BENEFITS
D Low Offse
✔ VN2410LS Application
D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.
D Telephone Mute Swit
VN2410L, Motorola Inc
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by VN2410L/D
TMOS FET Transistor
N–Channel — Enhancement
VN2410L
3 DRAIN
2 GATE
1 SOURC.
VN2410L, ON Semiconductor
VN2410L
Small Signal MOSFET
240 V, 200 mA, N−Channel TO−92
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
D.
VN2410, Supertex Inc
VN2410
N-Channel Enhancement-Mode Vertical DMOS FET
Features
► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► L.
VN2410, Microchip
VN2410
N-Channel Enhancement-Mode Vertical DMOS FET
Features
• Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L.
VN2406, Supertex Inc
Supertex inc.
VN2406
N-Channel Enhancement-Mode Vertical DMOS FET
Features
►► Free from secondary breakdown ►► Low power drive requirement ►► Ease .
