* D D D D Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance D Low input capacitance D High AGC-range D High gain 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 BF998 Marking: MO Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 =
BF998RW
Vishay ↗ Telefunken
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N-channel dual gate mos-fieldeffect tetrode.
BF998/BF998R/BF998RW Vishay Telefunken N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe pr.
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