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BF998WR - N-channel dual-gate MOS-FET

NXP

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Datasheet Details

Part number	BF998WR
Manufacturer	NXP ↗
File Size	94.61 KB
Description	N-channel dual-gate MOS-FET
Datasheet	BF998WR_PhilipsSemiconductors.pdf

BF998WR Product details

Description

Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected.

Features

High forward transfer admittance.
Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier up to 1 GHz.

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Published: Mar 23, 2005 |