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BF998WR N-channel dual-gate MOS-FET

NXP

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product speciﬁcation Supersedes data of 1995 Apr 25 File under Discrete Semic.
Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected.

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Datasheet Specifications

Part number: BF998WR
Manufacturer: NXP ↗
File Size: 94.61 KB
Datasheet: BF998WR_PhilipsSemiconductors.pdf
Description: N-channel dual-gate MOS-FET

Features

* High forward transfer admittance
* Short channel transistor with high forward transfer admittance to input capacitance ratio

BF998WR Distributors

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BF998WR N-channel dual-gate MOS-FET NXP

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