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BF998WR Datasheet - NXP

BF998WR N-channel dual-gate MOS-FET

Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic .

BF998WR Features

* High forward transfer admittance

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS

* VHF and UHF applications with 12 V supply voltage, such as television tuner

BF998WR Datasheet (94.61 KB)

Preview of BF998WR PDF

Datasheet Details

Part number:

BF998WR

Manufacturer:

NXP ↗

File Size:

94.61 KB

Description:

N-channel dual-gate mos-fet.

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TAGS

BF998WR N-channel dual-gate MOS-FET NXP

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