Datasheet4U Logo Datasheet4U.com

BF991 - N-channel dual-gate MOS-FET

📥 Download Datasheet

Preview of BF991 PDF
datasheet Preview Page 2 datasheet Preview Page 3

BF991 Product details

Description

s, b source d drain g2 gate 2 g1 gate 1 DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.handbook, halfpage 4 3 d g2 g1 1 Top view 2 MAM039 s,b Marking code: %MA.Fig.1 Simplified outline (SOT143) and symbol.QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP.VDS ID Ptot Tj Yfs Cig1-s Crs F drain-source voltage drain current total power dissipation junction temperature transfer admittanc

Features

📁 BF991 Similar Datasheet

  • BF993 - N-Channel MOSFET Transistor (Siemens)
  • BF995 - N-Channel Dual Gate MOS-Fieldeffect Tetrode (Vishay Telefunken)
  • BF998 - Silicon N-Channel MOSFET Tetrode (Infineon)
  • BF998R - Silicon N-Channel MOSFET Tetrode (Infineon)
  • BF998RW - N-Channel Dual Gate MOS-Fieldeffect Tetrode (Vishay Telefunken)
  • BF998W - Silicon N-Channel MOSFET Tetrode (Siemens Semiconductor Group)
  • BF999 - Silicon N-Channel MOSFET Triode (Siemens Semiconductor Group)
  • BF900 - Sicherungshalter (Inter Control)
Other Datasheets by NXP
Published: |