BF991 Datasheet - NXP

BF991 N-channel dual-gate MOS-FET

s, b source d drain g2 gate 2 g1 gate 1 DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. handbook, halfpage 4 3 d g2 g1 1 Top view 2 MAM039 s,b Marking code: %MA. Fig.1 Simplified outline (SOT143) and.

BF991 N-channel dual-gate MOS-FET Rev. 03 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http:.

BF991 Features

* Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS

* VHF applications such as:

* VHF television tuners and FM tuners

* Professional communication equipment. PINNING PIN 1 2 3 4 SYMBOL DESCRIP

BF991 Datasheet (218.45 KB)