BF996S Datasheet - NXP

BF996S N-channel dual-gate MOS-FET

Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. 4 3 g2 g1 d DESCRIPTION 1 2 s,b Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Y fs Cig-1s Crs F PARAMETER drain-source voltag.

BF996S Features

* Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS

* RF applications such as:

* UHF television tuners

* Professional communication equipment. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain

BF996S_PhilipsSemiconductors.pdf