BF996S - N-channel dual-gate MOS-FET

NXP

BF996S Datasheet Preview — Preview of BF996S PDF

Datasheet Details

Part number	BF996S
Manufacturer	NXP ↗
File Size	35.07 KB
Description	N-channel dual-gate MOS-FET
Datasheet	BF996S_PhilipsSemiconductors.pdf

BF996S Product details

Description

Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. S = 4 V up to Tamb = 60 °C CONDITIONS

Features

Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

📁 BF996S Similar Datasheet

BF993 - N-Channel MOSFET Transistor (Siemens)
BF995 - N-Channel Dual Gate MOS-Fieldeffect Tetrode (Vishay Telefunken)
BF998 - Silicon N-Channel MOSFET Tetrode (Infineon)
BF998R - Silicon N-Channel MOSFET Tetrode (Infineon)
BF998RW - N-Channel Dual Gate MOS-Fieldeffect Tetrode (Vishay Telefunken)
BF998W - Silicon N-Channel MOSFET Tetrode (Siemens Semiconductor Group)
BF999 - Silicon N-Channel MOSFET Triode (Siemens Semiconductor Group)
BF900 - Sicherungshalter (Inter Control)

Other Datasheets by NXP

BF990A - N-channel dual-gate MOS-FET
BF991 - N-channel dual-gate MOS-FET
BF992 - Silicon N-channel dual gate MOS-FET
BF994S - N-channel dual-gate MOS-FET
BF997 - N-channel dual-gate MOS-FET
BF998WR - N-channel dual-gate MOS-FET

Published: Mar 23, 2005 |