BF996S Datasheet - NXP

N-channel dual-gate MOS-FET

BF996S Features

* Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS

* RF applications such as:

* UHF television tuners

* Professional communication equipment. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain

BF996S General Description

Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. 4 3 g2 g1 d DESCRIPTION 1 2 s,b Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Y fs Cig-1s Crs F PARAMETER drain-source voltag.

BF996S Datasheet (35.07 KB)

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Datasheet Details

Part number:

BF996S

Manufacturer:

NXP ↗

File Size:

35.07 KB

Description:

N-channel dual-gate mos-fet.
DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product speciﬁcation File under Discrete Semiconductors, SC07 April 1991 Phil.

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BF996S N-channel dual-gate MOS-FET NXP

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BF996S Features

BF996S General Description

Datasheet Details

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