BF997 Datasheet - NXP

BF997 N-channel dual-gate MOS-FET

Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. handbook, halfpage 4 3 g 2 g1 d PINNING Top view MAM039 s,b PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION Marking code: MKp. Fig.1 Simplified.

BF997 Features

* Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source

* Integrated drain resistance to suppress oscillation in the frequency range greater than 1 GHz. APPLICATIONS

* UHF and VHF applications such as:

* UHF/VHF te

BF997 Datasheet (31.50 KB)