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BF997 N-channel dual-gate MOS-FET

NXP

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product speciﬁcation File under Discrete Semiconductors, SC07 April 1991 Phili.
Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.

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Datasheet Specifications

Part number: BF997
Manufacturer: NXP ↗
File Size: 31.50 KB
Datasheet: BF997_PhilipsSemiconductors.pdf
Description: N-channel dual-gate MOS-FET

Features

* Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source

Applications

* UHF and VHF applications such as:
* UHF/VHF television tuners
* Professional communication equipment

BF997 Distributors

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BF997 N-channel dual-gate MOS-FET NXP

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