* D Integrated gate protection diodes D High cross modulation performance D Low noise figure 2 1 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 D 94 9279 13 579 3 4 12623 BF994 Marking: MG Plastic case (SOT 143) 1=Source, 2=Drain, 3=Gate 2, 4=Gate 1 S Absolute Maximu
BF994S
Vishay ↗ Telefunken
119.03 KB
N-channel dual gate mos-fieldeffect tetrode.
BF994S Vishay Telefunken N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for .
📁 Related Datasheet
BF994S N-channel dual-gate MOS-FET (NXP)
BF994S Silicon N Channel MOSFET Tetrode (Siemens Semiconductor Group)
BF990A N-channel dual-gate MOS-FET (NXP)
BF991 N-channel dual-gate MOS-FET (NXP)
BF992 Silicon N-channel dual gate MOS-FET (NXP)
BF993 N-Channel MOSFET Transistor (Siemens)
BF995 N-Channel Dual Gate MOS-Fieldeffect Tetrode (Vishay Telefunken)
BF995 Silicon N Channel MOSFET Tetrode (Siemens Semiconductor Group)
BF996S N-channel dual-gate MOS-FET (NXP)
BF996S N.Channel Dual Gate MOS-Fieldeffect Tetrode (Vishay Telefunken)
