BPW17N - Silicon NPN Phototransistor
BPW17N Features
* Package type: leaded
* Package form: T-¾
* Dimensions (in mm): Ø 1.8
* High photo sensitivity
* High radiant sensitivity
* Suitable for visible and near infrared radiation
* Fast response times
* Angle of half sensitivity: ϕ = ± 12°
