TSTS7302 Datasheet - Vishay Telefunken

TSTS7302, GaAs IR Emitting Diodes

VISHAY TSTS730.Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO-18 Case .
The TSTS730.

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TSTS7302_VishayTelefunken.pdf

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Datasheet Details

Part number:

TSTS7302

Manufacturer:

Vishay ↗ Telefunken

File Size:

196.47 KB

Description:

GaAs IR Emitting Diodes

Features

* High radiant intensity
* Suitable for pulse operation
* Angle of half intensity ϕ = ± 12°
* Peak wavelength λp = 950 nm
* High reliability
* Good spectral matching to Si photodetectors

Applications

* Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse Voltage Forward current Peak Forward Current Surge Forward Current Power Dissipation Tcase ≤ 25 °C tp/T = 0.5, tp ≤ 100 µs, Tcase ≤ 25 °C tp ≤ 100 µs Jun

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TSTS7302 GaAs Emitting Diodes Vishay Telefunken

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