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www.vishay.com
IRFD9020
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
-60 VGS = -10 V
19 5.4 11 Single
0.28
HVMDIP
S G
D
S G
D P-Channel MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• For automatic insertion
• End stackable
• P-channel
• 175 °C operating temperature
• Fast switching
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.