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MBR20100CT-E3 Datasheet - Vishay

MBR20100CT-E3 Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier

MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3 www.vishay.com Vishay General Semiconductor Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier TO-220AB TMBS® ITO-220AB MBR2090CT MBR20100CT PIN 1 PIN 2 PIN 3 CASE 3 2 1 MBRF2090CT MBRF20100CT PIN 1 PIN 2 PIN 3 TO-263AB K 123 2 1 MBRB2090CT MBRB20100CT PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 2 x 10 A 90 V to 100 V 150 A 0.65 V 150 °C TO-220AB, ITO-220AB, TO-263.

MBR20100CT-E3 Features

* Trench MOS Schottky technology

* Lower power losses, high efficiency

* Low forward voltage drop

* High forward surge capability

* High frequency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

MBR20100CT-E3 Datasheet (150.86 KB)

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Datasheet Details

Part number:

MBR20100CT-E3

Manufacturer:

Vishay ↗

File Size:

150.86 KB

Description:

Dual common-cathode high voltage trench mos barrier schottky rectifier.

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MBR20100CT-E3 Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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