* Trench MOS Schottky technology
* Lower power losses, high efficiency
* Low forward voltage drop
* High forward surge capability
* High frequency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definiti
MBR20100CT-M3 Datasheet (118.17 KB)
MBR20100CT-M3
118.17 KB
Dual high voltage trench mos barrier schottky rectifier.
www.vishay.com
MBR2090CT-M3, MBR20100CT-M3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
TO-220AB
PI.
📁 Related Datasheet
MBR20100CT-1 SCHOTTKY RECTIFIER (International Rectifier)
MBR20100CT-1PbF SCHOTTKY RECTIFIER (International Rectifier)
MBR20100CT-E3 Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
MBR20100CT-N3 Schottky Rectifier (Vishay)
MBR20100CT-T Trench Schottky Rectifier (CITC)
MBR20100CT-Y Dual Common Cathode Schottky Rectifier (Taiwan Semiconductor)
MBR20100CT Schottky Barrier Rectifier Diode (Diotec)
MBR20100CT Schottky Barrier Rectifier (MOSPEC)
MBR20100CT SCHOTTKY BARRIER RECTIFIER (LITE-ON)
MBR20100CT Schottky Barrier Rectifier (INCHANGE)
