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SI1308EDL N-Channel MOSFET

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Description

www.vishay.com Si1308EDL Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX.0.132 at VGS = 10 V 0.144 at VG.

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Features

* TrenchFET® power MOSFET
* 100 % Rg tested
* Typical ESD performance 1800 V

Applications

* Smart phones, tablet PC’s - DC/DC converters - Boost converters - Load switch, OVP switch G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drai

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