* Low Figure-of-Merit Ron x Qg 0.38
* 100 % Avalanche Tested
* Gate Charge Improved
* Trr/Qrr Improved
* Compliant to RoHS Directive 2002/95/EC TO-247AC G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free TO-247AC SiHG16N50C-E3 ABSOLUTE
SIHG16N50C Datasheet (166.08 KB)
SIHG16N50C
166.08 KB
Power mosfet.
SiHG16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10.
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