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SIRA00DP N-Channel MOSFET

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Description

N-Channel 30 V (D-S) MOSFET SiRA00DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) 0.00100 at VGS = 10 V 0.00135 at VGS = 4.5 V .

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Datasheet Specifications

Part number
SIRA00DP
Manufacturer
Vishay ↗
File Size
324.91 KB
Datasheet
SIRA00DP-Vishay.pdf
Description
N-Channel MOSFET

Features

* TrenchFET® Gen IV Power MOSFET
* 100 % Rg and UIS Tested

Applications

* Synchronous Rectification
* ORing
* High Power Density DC/DC
* VRMs and Embedded DC/DC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Conti

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