SIRA10DP N-Channel MOSFET

Vishay

Description

www.vishay.com SiRA10DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () (MAX.) 0.0037 at VGS = 10 V 0.0050 at.

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Datasheet Specifications

Part number: SIRA10DP
Manufacturer: Vishay ↗
File Size: 393.75 KB
Datasheet: SIRA10DP-Vishay.pdf
Description: N-Channel MOSFET

Features

* TrenchFET® Gen IV power MOSFET
* 100 % Rg and UIS tested

Applications

* High power density DC/DC
* Synchronous rectification
* VRMs and embedded DC/DC G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed

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SIRA10DP N-Channel MOSFET Vishay

Vishay SIRA10DP-like datasheet