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SIRA12DP N-Channel 30v MOSFET

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Description

N-Channel 30 V (D-S) MOSFET SiRA12DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) 0.0043 at VGS = 10 V 30 0.0060 at VGS = 4.5 V I.

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Datasheet Specifications

Part number
SIRA12DP
Manufacturer
Vishay ↗
File Size
339.06 KB
Datasheet
SIRA12DP-Vishay.pdf
Description
N-Channel 30v MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Gen IV Power MOSFET
* 100 % Rg and UIS Tested

Applications

* High Power Density DC/DC D
* Synchronous Rectification
* VRMs and Embedded DC/DC G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS + 20, - 16

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