SIS902DN Dual N-Channel MOSFET

Vishay

Description

Dual N-Channel 75-V (D-S) MOSFET SiS902DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.186 at VGS = 10 V 75 0.228 at VGS = 4.5 V ID (A.

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Datasheet Specifications

Part number: SIS902DN
Manufacturer: Vishay ↗
File Size: 93.36 KB
Datasheet: SIS902DN-Vishay.pdf
Description: Dual N-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile
* 100 % Rg Tested
* 100 % UIS Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIO

Applications

* POL D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS VGS 75 ± 20 V TC = 25 °C 4e Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA =

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SIS902DN Dual N-Channel MOSFET Vishay

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