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SiS932EDN Datasheet - Vishay

SiS932EDN - N-Channel 30V MOSFET

SiS932EDN Features

* TrenchFET® power MOSFET

* Typical ESD (HBM): 1900 V

* 100 % Rg and UIS tested

* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D1 D2

* DC/DC converters

* H-bridge

* Load switch G

SiS932EDN-Vishay.pdf

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Datasheet Details

Part number:

SiS932EDN

Manufacturer:

Vishay ↗

File Size:

257.33 KB

Description:

N-channel 30v mosfet.

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