SiS932EDN - N-Channel 30V MOSFET
SiS932EDN Features
* TrenchFET® power MOSFET
* Typical ESD (HBM): 1900 V
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D1 D2
* DC/DC converters
* H-bridge
* Load switch G
