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SUD19N20-90 N-Channel MOSFET

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Description

SUD19N20-90 Vishay Siliconix N-Channel 200 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.090 at VGS = 10 V 0.105 at VGS = 6 V ID.

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Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested

Applications

* Primary Side Switch D Drain Connected to Tab GDS Top View Ordering Information: SUD19N20-90-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Cu

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