* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Primary Side Switch D Drain Connected to Tab GDS Top View Ordering Information: SUD19N20-90-E3 (Lead (Pb)
SUD19N20-90 Datasheet (166.55 KB)
SUD19N20-90
166.55 KB
N-channel mosfet.
SUD19N20-90
Vishay Siliconix
N-Channel 200 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) 200
RDS(on) () 0.090 at VGS = 10 V 0.105 at VGS = 6 V
ID.
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