* TrenchFET® Power MOSFET
* 175 °C Junction Temperature S GDS Top View Drain Connected to Tab Ordering Information: SUD19P06-60L-E3 (Lead (Pb)-free) G D P-Channel MOSFET RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source
SUD19P06-60L Datasheet (80.59 KB)
SUD19P06-60L
80.59 KB
P-channel mosfet.
New Product SUD19P06-60L Vishay Siliconix P-Channel 60-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 60 0.060 at VGS = - 10 V 0.07.
📁 Related Datasheet
SUD19P06-60 P-Channel MOSFET (Vishay)
SUD19N20-90 N-Channel MOSFET (Vishay)
SUD10P06-280L P-Channel MOSFET (Vishay Siliconix)
SUD15N15-95 N-Channel MOSFET (INCHANGE)
SUD-40150CB00 Ultrasonic Sensor (Mitsumi)
SUD-40165CB00 Ultrasonic Sensor (Mitsumi)
SUD06N10-225L N-Channel MOSFET (Vishay Siliconix)
SUD06N10-225L-GE3 N-Channel MOSFET (Vishay Siliconix)
SUD08P06-155L P-Channel MOSFET (Vishay Siliconix)
SUD09P10-195 P-Channel MOSFET (INCHANGE)
