* TrenchFET® power MOSFET
* Maximum 175 °C junction temperature
* Qgd/Qgs ratio < 0.5
* Operable with logic-level gate drive
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICA
SUP40010EL Datasheet (142.25 KB)
SUP40010EL
142.25 KB
N-channel mosfet.
www.vishay.com
SUP40010EL
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) (Ω) MAX. 0.0018 at VGS = 10 V 0.0021 at.
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