* TrenchFET® Gen IV power MOSFET
* Maximum 175 °C junction temperature
* Very low Qgd reduces power loss from passing through Vplateau
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLI
SUP50010EL Datasheet (140.19 KB)
SUP50010EL
140.19 KB
N-channel mosfet.
www.vishay.com SUP50010EL Vishay Siliconix N-Channel 60 V (D-S) MOSFET TO-220AB Top View S D G PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS =.
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