Si4409DY
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P-channel mosfet.
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Si4401DDY - P-Channel 40V (D-S) MOSFET
(Vishay)
P-Channel 40 V (D-S) MOSFET
Si4401DDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 40
RDS(on) () 0.015 at VGS = - 10 V 0.022 at VGS = - 4.5 V
ID (.
SI4401DY - P-Channel MOSFET
(Vishay Siliconix)
P-Channel 40-V (D-S) MOSFET
Si4401DY
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PRODUCT SUMMARY
VDS (V) - 40
RDS(on) (Ω) 0.0155 at VGS = - 10 V 0.0225 at VGS = - 4.5 V
ID .
SI4403BDY - P-Channel MOSFET
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Si4403BDY
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.017 @ VGS = - 4.5 V - 20 0.023 @ VGS = - 2.
SI4403CDY - P-Channel MOSFET
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New Product
Si4403CDY
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P-Channel 1.8 V (G-S) MOSFET
FEATURES
ID (A)d - 13.4 - 12 - 10.5 36.5 nC Qg (Typ.)
PRODUCT SUMMARY
VDS (V) -.
SI4403DY - P-Channel MOSFET
(Vishay Siliconix)
Si4403DY
New Product
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P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.017 @ VGS = –4.5 V –20 0.023 @ VGS = –2.5 V.
SI4404DY - N-Channel MOSFET
(Vishay Siliconix)
N-Channel 30-V (D-S) MOSFET
Si4404DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0065 at VGS = 10 V 0.008 at VGS = 4.5 V
ID (A) 23.
SI4405DY - P-Channel MOSFET
(Vishay Siliconix)
New Product
P-Channel 30-V (D-S) MOSFET
Si4405DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 30 0.0075 at VGS = - 10 V
ID (A) - 17
S.
Si4407 - P-Channel Enhancement MOSFET
(Nanxin)
Features
·Low On resistance. ·-4.5V drive. ·RoHS pliant.
Si4407
P-Channel Enhancement MOSFET
Si4407
Package Dimensions
Specifications
Absolute.
SI4410BDY - N-Channel MOSFET
(Vishay Siliconix)
N-Channel 30-V (D-S) MOSFET
Si4410BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0135 at VGS = 10 V 0.020 at VGS = 4.5 V
ID (A) 1.
SI4410DY - N-channel FET
(NXP)
Si4410DY
N-channel enhancement mode field-effect transistor
M3D315
Rev. 02 — 05 July 2001
Product data
1. Description
N-channel enhancement mode fiel.
