Datasheet Summary
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Vishay Siliconix
N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel 12 RDS(on) () MAX. 0.028 at VGS = 4.5 V 0.033 at VGS = 2.5 V 0.042 at VGS = 1.8 V 0.054 at VGS = -4.5 V P-Channel -20 0.070 at VGS = -2.5 V 0.104 at VGS = -1.8 V 0.165 at VGS = -1.5 V ID (A) 4.5 a 4.5 a 4.5 a -4.5 a -4.5 a -4.5 a -1.5 9.5 nC 6.2 nC Qg (TYP.)
Features
- TrenchFET® Power MOSFETs
- Typical ESD protection: N-channel 2400 V P-channel 2000 V
- 100 % Rg tested
- Material categorization: For definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Portable devices such as smart phones, tablet PCs and mobile puting
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