The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SiA537EDJ
www.vishay.com
Vishay Siliconix
N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel 12 RDS(on) () MAX. 0.028 at VGS = 4.5 V 0.033 at VGS = 2.5 V 0.042 at VGS = 1.8 V 0.054 at VGS = -4.5 V P-Channel -20 0.070 at VGS = -2.5 V 0.104 at VGS = -1.8 V 0.165 at VGS = -1.5 V ID (A) 4.5 a 4.5 a 4.5 a -4.5 a -4.5 a -4.5 a -1.5 9.5 nC 6.2 nC Qg (TYP.)
FEATURES
• TrenchFET® Power MOSFETs • Typical ESD protection: N-channel 2400 V P-channel 2000 V • 100 % Rg tested • Material categorization: For definitions of compliance please see www.vishay.
SiA537EDJ Datasheet
