SiA533EDJ Datasheet | Vishay

FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Power MOSFETs - Typical ESD Protection: N-Channel 1500 V P-Channel 1000 V - 100 % Rg Tested - pliant to Ro HS Directive 2002/95/EC APPLICATIONS - Load Switch for Portable Devices - DC/DC Converters Power PAK® SC-70-6 Dual D1 S1 D1 D1 6 5 2.05 mm G2 4 S2 2.05 mm D2 EHX Part # code XXX Lot Traceability and Date code 1 2 G1 3 D2 S2 Marking Code G1 G2 S1 D2 P-Channel MOSFET Ordering Information: Si A533EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Source Drain Current Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 1.6b, c 7.8 5 1.9b, c 1.2b, c - 55 to 150 260 N-Channel 12 ±8 - 4.5a - 4.5a - 4.5a, b, c - 3.7b, c - 15 - 4.5a - 1.6b, c 7.8 5 1.9b, c 1.2b, c °C W A P-Channel - 12 V Unit Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 .vishay. 1 New Product Si A533EDJ Vishay Siliconix THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambient b, f P-Channel Typ. 52 12.5 Max. 65 16 Unit °C/W Symbol t≤5s Steady State Rth JA Rth JC Typ. 52...