SiA511DJ Datasheet | Vishay

FEATURES ID (A) 4.5 a Qg (Typ.) 4.5 n C 4.5a 4.5a - 4.5a - 4.5a - 4.5 a - Halogen-free - Trench FET® Power MOSFETs - New Thermally Enhanced Power PAK® SC-70 Package - Small Footprint Area - Low On-Resistance Ro HS PLIANT 5 n C APPLICATIONS - Load Switch for Portable Devices 1 S1 G1 D1 D1 6 G2 5 2.05 mm 4 S2 D2 Part # code 2.05 mm 2 3 D2 D1 S2 Marking Code G2 EAX XXX Lot Traceability and Date code S1 D2 P-Channel MOSFET G1 Ordering Information: Si A511DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS N-Channel 12 ±8 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 1.6b, c 6.5 5 1.9b, c 1.2b, c - 55 to 150 260 - 4.5a - 4.5a - 4.3b, c - 3.4b, c - 10 - 4.5a - 1.6b, c 6.5 5 1.9b, c 1.2b, c P-Channel - 12 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation PD TJ,...