SiA519EDJ Datasheet | Vishay

FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 RDS(on) () 0.040 at VGS = 4.5 V 0.065 at VGS = 2.5 V 0.090 at VGS = - 4.5 V 0.137 at VGS = - 2.5 V ID (A) 4.5 a Qg (Typ.) 3.7 n C 4.5a - 4.5a - 4.5a P-Channel - 20 5.3 n C - Trench FET® Power MOSFETs - Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V - 100 % Rg Tested - Material categorization: For definitions of pliance please see .vishay./doc?99912 Power PAK® SC-70-6 Dual D1 S1 D1 D1 6 5 2.05 mm G2 4 S2 2.05 mm D2 EGX Part # code XXX Lot Traceability and Date code 1 2 G1 3 D2 S2 Marking Code G1 G2 S1 D2 P-Channel MOSFET Ordering Information: Si A519EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS N-Channel 20 ± 12 4.5a 4.5a 4.5a, b, c 4.4b, c 15 4.5a 1.6b, c 7.8 5 1.9b, c 1.2b, c - 55 to 150 260 - 4.5a - 3.7b, c - 3b, c - 15 - 4.5a - 1.6b, c 7.8 5 1.9b, c 1.2b, c A 4.5a P-Channel - 20 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation PD TJ,...