SiA537EDJ
SiA537EDJ is N-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Power MOSFETs
- Typical ESD protection: N-channel 2400 V P-channel 2000 V
- 100 % Rg tested
- Material categorization: For definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Portable devices such as smart phones, tablet PCs and mobile puting
- Load switches
- Power management
- DC/DC converters
D1 S2
Power PAK® SC-70-6L Dual
S2 4 G2 5 D1 6
D1 D2
1 m 5m 2.0
Top View
3 D2 Bottom View
2 G1
1 S1
Marking Code: EK Ordering Information: Si A537EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 100 μs) Source Drain Current Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) d,e TJ, Tstg PD IDM IS ID SYMBOL VDS VGS 4.5 a 4.5 a 4.5 4.5 a,b,c a,b,c
S13-2635-Rev. A, 30-Dec-13
2. 05 m m
G1 G2
S1 N-Channel MOSFET
D2 P-Channel MOSFET
N-CHANNEL 12 ±8
P-CHANNEL -20 -4.5 a -4.5 a -4.5 a,b,c -4.5 a,b,c -15 -4.5 a -1.6 b,c 7.8 5 1.9 b,c 1.2 b,c
UNIT V
20 4.5 a 1.6 5 1.9 b,c 1.2 b,c -55 to 150 260 b,c
°C
Document Number: 62934 1 For technical questions, contact: pmostechsupport@vishay. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT .vishay./doc?91000
Si A537EDJ
.vishay.
Vishay Siliconix
N-CHANNEL TYP. 52 12.5 MAX. 65 16 P-CHANNEL TYP. 52 12.5 MAX. 65 16
THERMAL RESISTANCE...
