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SiA537EDJ - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Power MOSFETs.
  • Typical ESD protection: N-channel 2400 V P-channel 2000 V.
  • 100 % Rg tested.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiA537EDJ
Manufacturer Vishay
File Size 337.13 KB
Description N-Channel MOSFET
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Full PDF Text Transcription

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SiA537EDJ www.vishay.com Vishay Siliconix N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 12 RDS(on) () MAX. 0.028 at VGS = 4.5 V 0.033 at VGS = 2.5 V 0.042 at VGS = 1.8 V 0.054 at VGS = -4.5 V P-Channel -20 0.070 at VGS = -2.5 V 0.104 at VGS = -1.8 V 0.165 at VGS = -1.5 V ID (A) 4.5 a 4.5 a 4.5 a -4.5 a -4.5 a -4.5 a -1.5 9.5 nC 6.2 nC Qg (TYP.) FEATURES • TrenchFET® Power MOSFETs • Typical ESD protection: N-channel 2400 V P-channel 2000 V • 100 % Rg tested • Material categorization: For definitions of compliance please see www.vishay.
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