SiDR608EP Datasheet - Vishay

SiDR608EP N-Channel MOSFET

SiDR608EP Features

* TrenchFET® Gen IV power MOSFET

* 45 V Drain-source break-down voltage

* Tuned for low Qg and Qoss

* 100 % Rg and UIS tested

* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D

* Synchronous r

Datasheet Details

SiDR608EP

220.17 KB

N-channel mosfet.

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SiDR608EP SiDR608EP N-Channel MOSFET Vishay

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