* TrenchFET® Gen IV power MOSFET
* Very low RDS - Qg figure of merit (FOM)
* Tuned for the lowest RDS - Qoss FOM
* 100 % Rg and UIS tested
* Top side cooling feature provides additional venue for thermal transfer
* Material categorization: for definiti
SiDR626EP Datasheet (172.57 KB)
SiDR626EP
172.57 KB
N-channel mosfet.
www.vishay.com
SiDR626EP
Vishay Siliconix
N-Channel 60 V (D-S) 175 °C MOSFET
PowerPAK® SO-8DC
D
D
D 6
D 7
8
5
S
6.15 mm
1 5.15 mm
Top Vie.
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