* 4th generation E series technology
* Low figure-of-merit (FOM) Ron x Qg
* Low effective capacitance (Co(er))
* Reduced switching and conduction losses
* Avalanche energy rated (UIS)
* Kelvin connection for reduced gate noise
* Material catego
SiHB125N65E Datasheet (184.90 KB)
SiHB125N65E
184.90 KB
Power mosfet.
www.vishay.com
SiHB125N65E
Vishay Siliconix
E Series Power MOSFET
D D2PAK (TO-263)
GD S
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. .
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