SiHB12N60E Power MOSFET

Vishay

Description

www.vishay.com SiHB12N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.RDS(on) max.at 25 °C (Ω) Qg max.(nC) Qgs (nC.

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Datasheet Specifications

Part number: SiHB12N60E
Manufacturer: Vishay ↗
File Size: 211.02 KB
Datasheet: SiHB12N60E-Vishay.pdf
Description: Power MOSFET

Features

* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS)
* Material categorization: for definitions of compliance please see www. vishay. com

Applications

* Server and telecom power supplies
* Switch mode power supplies (SMPS)
* Power factor correction power supplies (PFC)
* Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
* Industrial - Welding - Induction heating - Motor drives - Batter

SiHB12N60E Distributors

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SiHB12N60E Power MOSFET Vishay

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