* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS)
* Material categorization: for definitions of compliance please see www.vishay.com
SiHB12N60E Datasheet (211.02 KB)
SiHB12N60E
211.02 KB
Power mosfet.
www.vishay.com
SiHB12N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC.
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