* Fast body diode MOSFET using E series technology
* Reduced trr, Qrr, and IRRM
* Low figure-of-merit (FOM): Ron x Qg
* Low input capacitance (Ciss)
* Low switching losses due to reduced Qrr
* Ultra low gate charge (Qg)
* Avalanche energy rated
SiHG28N60EF Datasheet (179.71 KB)
SiHG28N60EF
179.71 KB
Ef series power mosfet.
www.vishay.com
SiHG28N60EF
Vishay Siliconix
EF Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (.
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