* TrenchFET® Gen IV power MOSFET
* Tuned for the lowest RDS-Qoss FOM
* 100 % Rg and UIS tested
* Qgd / Qgs ratio < 1 optimizes switching characteristics
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
SiRA52DP Datasheet (399.92 KB)
SiRA52DP
399.92 KB
N-channel mosfet.
www.vishay.com
SiRA52DP
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () (MAX.) 0.0017 at VGS = 10 V 0.0023 at.
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