* TrenchFET® Gen IV power MOSFET
* Tuned for the lowest RDS - Qoss FOM
* 100 % Rg and UIS tested
* Qgd / Qgs ratio < 1 optimizes switching characteristics
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATION
SiSB46DN Datasheet (594.01 KB)
SiSB46DN
594.01 KB
N-channel mosfet.
www.vishay.com
SiSB46DN
Vishay Siliconix
Dual N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () MAX. 0.01171 at VGS = 10 V 0.015.
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